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 STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z
N-CHANNEL 600V-0.65-10A - TO220/FP-D/IPAK-TO-247 Zener-Protected SuperMESHTM MOSFET
General features
Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z
s s s s s s
Package
RDS(on) <0.75 <0.75 <0.75 <0.75 <0.75 ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156
VDSS 600 600 600 600 600 V V V V V
3 1 2
1 2
3
3 2 1
TO-220
TO-220FP TO-247
TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY
3 1
3 12
DPAK
IPAK
Internal schematic diagram
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Applications
s s
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC LIGHTING
s
July 2005
Rev 1 1/19
www.st.com 19
1 Absolute maximum ratings
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1
Table 1.
Absolute maximum ratings
Absolute maximum ratings
Parameter Value TO-220/D/IPAK TO-220FP VDS VDGR VGS ID ID IDM Note 2 PTOT Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor 10 5.7 600 600 30 10 (Note 3) 5.7 (Note 3) 36 (Note 3) 35 0.28 4000 4.5 -2500 -55 to 150 -10 5.7 TO-247 V V V A A Unit
Symbol
36 115 0.92
36 156 1.25
A W W/C V V/ns V C
Vesd(G-S) dv/dt Note 1 VISO Tj Tstg
G-S ESD (HBM C=100pF, R=1.5k) Peak Diode Recovery voltage slope Insulation Withstand Volatge (DC) Operating Junction Temperature Storage Temperature
Table 2.
Thermal data
TO-220 IPAK DPAK TO-220FP TO-247 3.6 60 62.5 300 50 0.8 Unit C/W C/W C/W C
Rthj-case Rthj-pcb Rthj-amb Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (when mounted on minimum Footprint) Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose
1.09
2/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3.
Symbol IAR EAS EAR
1 Absolute maximum ratings
Avalanche characteristics
Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25C, ID=IAR, VDD = 50V) Repetitive Avalanche Energy (pulse width limited by Tj max) Max Value 9 300 Unit A mJ
3.5
mJ
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Gate-Source Breakdown Voltage Test Conditions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V
1.1
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
3/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified)
Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/Off
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250A, V GS= 0 VDS = Max Rating, VGS = 15V, VDS = 0 VDS= VGS, ID = 250 A VGS= 10 V, ID= 20 A 3 3.75 0.65 Min. 600 1 50
10
Typ.
Max.
Unit V A
A V
4.5 0.75
Table 6.
Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd
Dynamic
Parameter Forward Transconductance Test Conditions VDS =15V, ID = 4.5A Min. Typ. 7.8 1370 156 37 90 50 10 25 70 Max. Unit S pF pF pF pF nC nC nC
Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=480V, ID = 8A VGS =10V (see Figure 19)
Table 7.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching on/off
Parameter Turn-on Delay Time Rise Time Test Conditions VDD=300 V, ID=4A, RG=4.7, VGS=10V (see Figure 20) VDD=300 V, ID=4A, RG=4.7, VGS=10V (see Figure 20) VDD=480 V, ID=8A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 20 20 Max. Unit ns ns
Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time
55 30 18 18 36
ns ns ns ns ns
4/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 8.
Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM
2 Electrical characteristics
Source drain diode
Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=10A, V GS=0 ISD=8A, di/dt = 100A/s, VDD=40 V, Tj=150C 570 4.3 15 Test Conditions Min. Typ. Max. 10 36 1.6 Unit A A V ns C A
(1) ISD 10A, di/dt 200A/s, VDD V(BR)DSS , Tj TJMAX (2) Pulse width limited by safe operating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300s, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
5/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2.1
Typical characteristics
Safe Operating Area for TO-220/D/IPAK Figure 2. Thermal Impedanc for TO-220/D/IPAK
Figure 1.
Figure 3.
Safe Operating Area for TO-220FP
Figure 4.
Thermal Impedance for TO-220FP
Figure 5.
Safe Operating Area for TO-247
Figure 6.
Thermal Impedance for TO-247
6/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 7. Output Characteristics Figure 8.
2 Electrical characteristics
Transfer Characteristics
Figure 9.
Transconductance
Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source Voltage
Figure 12. Capacitance Variations
7/19
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs vs Temperatute Temperature
Figure 15. Source-drain Diode Forward Characteristics
Figure 16. Normalized BVDSS vs Temperature
Figure 17. Maximum Avalanche Energy vs Temperature
8/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
3 Test circuits
3
Test circuits
Figure 19. Gate Charge Test Circuit
Figure 18. Switching Times Test Circuit For Resistive Load
Figure 20. Test Circuit For Indictive Load Switching and Diode Recovery Times
9/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
10/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
11/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
12/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
13/19
4 Package mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
14/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
4 Package mechanical data
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
15/19
5 Packing mechanical data
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
5
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
16/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
6 Order codes
6
Order codes
Sales Type STB10NK60Z-1 STB10NK60ZT4 STP10NK60ZFP STP10NK60Z STW10NK60Z Marking B10NK60Z-1 B10NK60Z P10NK60ZFP P10NK60Z W10NK60Z Package IPAK DPAK TO-220FP TO-220 TO-247 Packaging TUBE TAPE & REEL TUBE TUBE TUBE
17/19
7 Revision History
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7
Revision History
Date 26-Jul-2005 Revision 2 Inserted Ecopack indication Changes
18/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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